IMPORTANT DATES FOR GATE-2012

GATE 2012 application form or GATE 2012 Notification: 12 September 2011
Last Date for submitting GATE 2012 Application Form: 17 October 2011
Gate 2012 Exam Date: 13 February 2012
GATE 2012 Result Announcement: 15 March 2012
M.Tech admissions 2012: 15 March 2012 till July 2012

ELIGIBILITY CRITERIA FOR GATE -2012

The following categories of candidates ONLY are eligible to appear for GATE:

a) Bachelor’s degree holders in Engineering/Technology/ Architecture (4 years after

10+2) and those who are in the final year of such programmes.

b) Master’s degree holders in any branch of Science/Mathematics/ Statistics/Computer

Applications or equivalent and those who are in the final year of such programmes.

c) Candidates in the second or higher year of the Four-year Integrated Master’s degree

programme (Post-B.Sc.) in Engineering/Technology.

d) Candidates in the fourth or higher year of Five-year Integrated Master’s degree

programme or Dual Degree programme in Engineering/Technology.

e) Candidates with qualifications obtained through examinations conducted by

professional societies recognized by UPSC/AICTE (e.g. AMIE by Institute of Engineers

(India); AMICE by Institute of Civil Engineers (India)) as equivalent to B.E./B.Tech.

Those who have completed section A or equivalent of such professional courses are also eligible.

GATE SYLLABUS 2012 - ECE

SYLLABUS FOR ELECTRONICS AND COMMUNICATION ENGINEERING (EC)

Engineering Mathematics

Linear Algebra:

Matrix Algebra, Systems of linear equations, Eigen values and eigen vectors.

Calculus:

Mean value theorems, Theorems of integral calculus, Evaluation of definite and improper integrals, Partial Derivatives, Maxima and minima, Multiple integrals, Fourier series. Vector identities, Directional derivatives, Line, Surface and Volume integrals, Stokes, Gauss and Green's theorems.

Differential equations:

First order equation (linear and nonlinear), Higher order linear differential equations with constant coefficients, Method of variation of parameters, Cauchy's and Euler's equations, Initial and boundary value problems, Partial Differential Equations and variable separable method.

Complex variables:

Analytic functions, Cauchy's integral theorem and integral formula, Taylor's and Laurent' series, Residue theorem, solution integrals.

Probability and Statistics:

Sampling theorems, Conditional probability, Mean, median, mode and standard deviation, Random variables, Discrete and continuous distributions, Poisson, Normal and Binomial distribution, Correlation and regression analysis.

Numerical Methods:

Solutions of non-linear algebraic equations, single and multi-step methods for differential equations.

Transform Theory:

Fourier transform, Laplace transform, Z-transform.

Electronics and Communication Engineering

Networks:

Network graphs: matrices associated with graphs; incidence, fundamental cut set and fundamental circuit matrices. Solution methods: nodal and mesh analysis. Network theorems: superposition, Thevenin and Norton's maximum power transfer, Wye-Delta transformation. Steady state sinusoidal analysis using phasors. Linear constant coefficient differential equations; time domain analysis of simple RLC circuits, Solution of network equations using Laplace transform: frequency domain analysis of RLC circuits. 2-port network parameters: driving point and transfer functions. State equations for networks.

Electronic Devices:

Energy bands in silicon, intrinsic and extrinsic silicon. Carrier transport in silicon: diffusion current, drift current, mobility, and resistivity. Generation and recombination of carriers. p-n junction diode, Zener diode, tunnel diode, BJT, JFET, MOS capacitor, MOSFET, LED, p-I-n and avalanche photo diode, Basics of LASERs. Device technology: integrated circuits fabrication process, oxidation, diffusion, ion implantation, photolithography, n-tub, p-tub and twin-tub CMOS process.

Analog Circuits:

Small Signal Equivalent circuits of diodes, BJTs, MOSFETs and analog CMOS. Simple diode circuits, clipping, clamping, rectifier. Biasing and bias stability of transistor and FET amplifiers. Amplifiers: single-and multi-stage, differential and operational, feedback, and power. Frequency response of amplifiers. Simple op-amp circuits. Filters. Sinusoidal oscillators; criterion for oscillation; single-transistor and op-amp configurations. Function generators and wave-shaping circuits, 555 Timers. Power supplies.

Digital circuits:

Boolean algebra, minimization of Boolean functions; logic gates; digital IC families (DTL, TTL, ECL, MOS, CMOS). Combinatorial circuits: arithmetic circuits, code converters, multiplexers, decoders, PROMs and PLAs. Sequential circuits: latches and flip-flops, counters and shift-registers. Sample and hold circuits, ADCs, DACs. Semiconductor memories. Microprocessor(8085): architecture, programming, memory and I/O interfacing.

Signals and Systems:

Definitions and properties of Laplace transform, continuous-time and discrete-time Fourier series, continuous-time and discrete-time Fourier Transform, DFT and FFT, z-transform. Sampling theorem. Linear Time-Invariant (LTI) Systems: definitions and properties; causality, stability, impulse response, convolution, poles and zeros, parallel and cascade structure, frequency response, group delay, phase delay. Signal transmission through LTI systems.

Control Systems:

Basic control system components; block diagrammatic description, reduction of block diagrams. Open loop and closed loop (feedback) systems and stability analysis of these systems. Signal flow graphs and their use in determining transfer functions of systems; transient and steady state analysis of LTI control systems and frequency response. Tools and techniques for LTI control system analysis: root loci, Routh-Hurwitz criterion, Bode and Nyquist plots. Control system compensators: elements of lead and lag compensation, elements of Proportional-Integral-Derivative (PID) control. State variable representation and solution of state equation of LTI control systems.

Communications:

Random signals and noise: probability, random variables, probability density function, autocorrelation, power spectral density. Analog communication systems: amplitude and angle modulation and demodulation systems, spectral analysis of these operations, superheterodyne receivers; elements of hardware, realizations of analog communication systems; signal-to-noise ratio (SNR) calculations for amplitude modulation (AM) and frequency modulation (FM) for low noise conditions. Fundamentals of information theory and channel capacity theorem. Digital communication systems: pulse code modulation (PCM), differential pulse code modulation (DPCM), digital modulation schemes: amplitude, phase and frequency shift keying schemes (ASK, PSK, FSK), matched filter receivers, bandwidth consideration and probability of error calculations for these schemes. Basics of TDMA, FDMA and CDMA and GSM.

Electromagnetics:

Elements of vector calculus: divergence and curl; Gauss' and Stokes' theorems, Maxwell's equations: differential and integral forms. Wave equation, Poynting vector. Plane waves: propagation through various media; reflection and refraction; phase and group velocity; skin depth. Transmission lines: characteristic impedance; impedance transformation; Smith chart; impedance matching; S parameters, pulse excitation. Waveguides: modes in rectangular waveguides; boundary conditions; cut-off frequencies; dispersion relations. Basics of propagation in dielectric waveguide and optical fibers. Basics of Antennas: Dipole antennas; radiation pattern; antenna gain.

NOTIFICATION REGARDING CAT PLACEMENTS

The change in the admission process, with a written test replacing the discussion round, will take place at the IIMs in Raipur, Rohtak, Ranchi, Udaipur, Tiruchirappalli and Kashipur in the coming year.

“Instead of going for individual GDs in every single institute, we are going to hold a common written analysis test for all the six new IIMs,” IIM Raipur director B.S. Sahay said.

The seven older IIMs won’t be changing the way in which they currently pick students. Candidates selected after the Common Admission Test (CAT) are called for the GD round in which they are broken up into groups of 8-10 that analyse a particular topic. They may at times be given a case study and asked to come up with a solution. A panel observes the groups and evaluates students based on their contribution to the discussion. A final selection is made after interviews with chosen candidates.

The GD round discriminates against those candidates who are low-key in demeanour.

“Generally in a GD, some members are dominant and a dominating candidate is not necessarily the best. In the process to get noticed, it becomes chaotic,” Sahay said. “We want to give everybody a chance and here written analysis seems to be a suitable option.”

QUESTION 11 ANSWER

Answer is 8

NO JMET THIS YEAR

QUESTION 11

My neighbour has 7 sons. If each of the sons had a sister, how many children does he have?
A)11
B)14
C)13
D)8

QUESTION 10 SOLUTION

ANSWER IS A) 5

4-1 1ST MID SCHEDULE

IV YEAR B.TECH. I SEMESTER (R07)
05-09-11 FN CN
06-09-11 FN EMI
06-09-11 AN CMC
07-09-11 FN OC
07-09-11 AN MCA
08-09-11 FN DIP

NOTIFICATION REGARDING COMMENCEMENT OF CLASSWORK

II & IV B.Tech./B.Pharm.-I Sem. (Reg.) (2011-12)

S.No	EVENT	DATE & DAY	Duration
1	Commencement of class-work	04-07-2011 (MON)	--
2	1st Spell of Instructions for covering Units 1,2,3 & 4	04-07-2011 (MON) to 03-09-2011(SAT)	09 Weeks
3	1st Mid Term Examinations ** Timings: 10.00 am To 12.00 Noon (Forenoon Session) 2.00 pm To 4.00 pm (Afternoon Session )	05-09-2011(MON) to 07-09-2011(WED)	03 Days
4	2nd Spell of Instructions for covering Units 5,6,7 & 8	08-09-2011 (THU) to 29-10-2011 (SAT)	08 Weeks
5	2nd Mid Term Examinations ** Timings: 10.00 am To 12.00 Noon (Forenoon Session ) 2.00 pm To 4.00 pm (Afternoon Session )	31-10-2011 (MON) to 02-11-2011 (WED)	03 Days
6	Practical Examinations	03-11-2011 (THU) to 13-11-2011 (SUN)	11 days
7	End Semester Examinations (Regular)	14-11-2011 (MON) to 26-11-2011 (SAT)	02 Weeks
8	Supplementary Examinations	28-11-2011 (MON) to 10-12-2011 (SAT)	02 Weeks
9	Commencement of Class work for II & IV Year – II Sem. for the academic year 2011-2012	12-12-2011 (MON)

II & IV B.Tech./B.Pharm.-II Sem. (Reg.) (2011-12)

S.No	EVENT	DATE & DAY	Duration
1	Commencement of class-work	12-12-2011 (MON)	--
2	1st Spell of Instructions for covering Units 1,2,3 & 4	12-12-2011 (MON) to 04-02-2012(SAT)	08 Weeks
3	1st Mid Term Examinations ** Timings: 10.00 am To 12.00 Noon (Forenoon Session) 2.00 pm To 4.00 pm (Afternoon Session )	06-02-2012(MON) to 08-02-2012(WED)	03 Days
4	2nd Spell of Instructions for covering Units 5,6,7 & 8	09-02-2012 (THU) to 31-03-2012 (SAT)	08 Weeks
5	2nd Mid Term Examinations ** Timings: 10.00 am To 12.00 Noon (Forenoon Session ) 2.00 pm To 4.00 pm (Afternoon Session )	02-04-2012 (MON) to 04-04-2012 (WED)	03 Days
6	Preparation and Practical Examinations	05-04-2012 (THU) to 15-04-2012 (SUN)	11 days
7	End Semester Examinations (Regular)	16-04-2012 (MON) to 28-04-2012 (SAT)	02 Weeks
8	Supplementary Examinations	30-04-2012 (MON) 12-05-2012 (SAT)	02 Weeks
9	Commencement of Class work for II & IV Year – I Sem. for the academic year 2012-2013	02-07-2012(MON)

QUESTION 10

In a 3 digit number the sum of the digits is 15. The tens digit is one less then the units digit. Which of the following numbers cannot be a digit in the hundreds place?
a) 5
b) 4
c) 6
d) 8

QUESTION9 SOLUTION

ANSWER IS 211213